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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS PA1751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 PACKAGE DIMENSIONS (in: millimeter) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 FEATURES * Dual MOSFET chips in small package * 4 V Gate Drive Type and Low On-Resistance RDS(on)1 = 37 m Max. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 64 m Max. (VGS = 4 V, ID = 2.5 A) 1.8 Max. 1 5.37 Max. 4 6.0 0.3 4.4 +0.10 -0.05 0.8 * Low Ciss Ciss = 510 pF Typ. * Built-in G-S Protection Diode * Small and Surface Mount Package (Power SOP8) 0.15 0.05 Min. 0.5 0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 -0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, all terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (1 unit)** Total Power Dissipation (2 unit)** Channel Temperature Storage Temperature * PW 10 s, Duty Cycle 1 % ** Mounted on ceramic substrate of 2000 mm2 x 1.1 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 20 5.0 20 1.7 2.0 150 -55 to +150 V V A A W W C C Gate Protection Diode Source Gate Body Diode Drain The information in this document is subject to change without notice. Document No. G10620EJ2V0DS00 Date Published April 1996 P Printed in Japan (c) 1996 PA1751 ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminal are connected) Characteristics Drain to Source On-state Resistance Symbol RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = 5.0 A VDD = 24 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 100 A/s Test Conditions VGS = 10 V, ID = 2.5 A VGS = 4 V, ID = 2.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS(on) = 10 V VDD = 15 V RG = 10 510 350 150 10 95 120 100 19 1.5 6.6 0.8 85 90 1.0 3.0 Min. Typ. 27 44 1.5 6.0 10 10 Max. 37 64 2.0 Unit m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL VGS PG. RG RG = 10 Wave Form D.U.T. VGS 0 ID 10 % VGS(on) IG = 2 mA 90 % RL VDD VDD 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 2 PA1751 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2000 mm 2 x 1.1 mm 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C 100 80 60 40 20 2.4 2.0 0 TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of 2000 mm2 x 1.1 mm ID - Drain Current - A m 10 s ID - Drain Current - A d ite ) 1 unit Lim 0 V n) =1 o S( GS RD t V ID(pulse) (a ID(DC) 20 1 10 10 4V m s 0 Po m s 10 1 we rD iss DC ipa tio n TA = 25 C Single Pulse 0.1 1 Lim ite d 10 100 0 0.5 1.0 1.5 2.0 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed ID - Drain Current - A 10 TA = -25 C 25 C 75 C 1.0 125 C 0.1 VDS = 10 V 6 0 2 4 VGS - Gate to Source Voltage - V 3 PA1751 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 0.01 0.001 10 Mounted on ceramic Single Pulse substrate of 2000 mm2 x 1.1 mm Single Pulse, 1 unit 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed Tch = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 Pulsed 10 100 ID = 2.5 A 50 1 0.1 1 10 100 0 4 8 12 16 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V Pulsed 2.0 VDS = 10 V ID = 1 mA 60 VGS = 4.0 V 40 VGS = 10 V 20 1.5 1.0 0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C 1 10 ID - Drain Current - A 100 4 PA1751 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed VGS = 4 V 60 ISD - Diode Forward Current - A 80 100 VGS = 4 V 10 VGS = 0 1 40 10 V 20 ID = 2.5 A -50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz tr tf 100 td(off) td(on) 10 1000 Ciss Coss 100 Crss 10 0.1 1 10 100 1 0.1 1 VDD = 15 V VGS(on) = 10 V RG =10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. BODY DIODE CURRENT 1 000 di/dt =100 A/s VGS = 0 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 30 12 100 20 VDD = 24 V 15 V 6V VGS 8 10 10 VDS 0 5 10 15 4 1 0.1 1 10 100 0 20 IF - Diode Current - A QG - Gate Charge - nC 5 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 ID = 5.0 A PA1751 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037 6 PA1751 [MEMO] 7 PA1751 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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